Ion Implantation Solutions

The primary method of doping silicon for semiconductor device manufacturing has been ion implantation, gas source doping, and solid source doping. Ion implantation is by far the most important mode of introducing dopant atoms into silicon substrates, addressing the increasing complexity of semiconductor chips and the processes that fabricate them.

The success of ion implantation processes is heavily dependent on the quality of the vacuum within ion implanters. Most of MKS' solutions for high vacuum applications in vacuum generation, control and monitoring are critical to the success of the ion implant process.