Dopant Atom Diffusion Solutions

Critical to the process of semiconductor fabrication is introducing small amounts of dopants at exact locations in controlled concentrations. This gives the semiconductor its required electrical properties. Diffusion is the movement of impurity atoms in silicon (or another semiconductor) at high temperature. Basically, diffusion can be described as a "smoothing out" of any localized high concentration of impurity atoms that is driven by the motion of the atoms in the material and by their mobility through the dominant atomic matrix.

MKS is as OEM supplier for producers of thermal processing products used in the semiconductor industry.

Dopant Atom Diffusion

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MKS Instruments Handbook Second Edition
Semiconductor Devices and Process Technology

Detailing the fundamental device physics, materials, and fabrication processes used to manufacture semiconductors.
A free book from MKS

Dopant Atom Diffusion
A detailed explanation of the thermal dopant atom diffusion process

Thermal Oxidation
Thermal oxides can be grown using a "dry" oxidation process

Thermal Annealing
High-temperature annealing is used in device manufacturing to relieve stress in silicon

Remote Plasma Sources for Clean Applications
For cleaning CVD and ALD/ALE process chambers

Microwave Generators & Systems
Compact microwave generators and systems adaptable to a wide range of applications

Mass Flow Controllers & Meters
Application-specific integrated solutions for advanced materials delivery

Baratron® Capacitance Manometers
For direct, gas independent, high accuracy pressure measurement