The DELTA™ II Flow Ratio Controller divides and controls mixed process gas flows to either multiple chambers or zones within a process chamber at ratios specified by the user maximizing process uniformity and repeatability. It is available with EtherCAT® or DeviceNet™ communications.
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|DLT2A2 Flow Ratio Controller, 2 Channels, DeviceNet||
|DLT2B Flow Ratio Controller, 2 Channels, EtherCAT||
The DELTA II has a wider dynamic ratio control range and is more adaptive to different tool and process conditions. MKS has developed a unique patent pending ratio control algorithm enabling ratio and flow response times of less than two (2) seconds. This control algorithm also enables a twenty to one ratio control range, more than double its industry leading predecessor.
The DELTA II maintains tight ratio control while the input flow is changed. Our unique patent pending ratio control algorithm enables ratio and flow response times of less than two seconds.
The DELTA II’s diagnostic feature allows the user to check the DELTA’s performance in-situ, lowering costs through reduced removal of “No Problem Found” devices. This feature is enabled through a web browser utility accessed through the device’s Ethernet port. This utility uses a standard web browser – no special software is required. For access, the IP address may be accessed through the devices bright LED display.
Widely used in a variety of flow splitting applications such as etch, strip, and CVD, the DELTA II provides the user with the ability to distribute gas or gas mixtures to two different zones in a process chamber. Send the DELTA II a gas – or any mixture – and a ratio set point and the DELTA II will split the gas into two separate output channels automatically and precisely.
Throughput and process control have always been critical to the semiconductor device manufacturer. With the advent of 300 mm wafers and dual process chambers, new methods of control gas flow distribution have become increasingly needed. 300 mm wafer processing often requires tunable control of gas distribution across the wafer to provide better process uniformity. Dual process chambers require proper gas distribution for chamber matching from single source gas panels.
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