Remote Plasma Source, 24 kW, High Flow Applications
Model: RPS-CH24P1-P24C
Remote Plasma Source, 24 kW, High Flow Applications
Remote Plasma Source, 24 kW, High Flow Applications
Model: RPS-CH24P1-P24C
Overview
Overview
The RPS-CH24P1, 24 kW remote plasma source is designed for use with larger Atomic Layer Deposition (ALD) and Quad-style Chemical Vapor Deposition (CVD) chambers used in Semiconductor, Flat Panel Display, or Photovoltaic (PV) processes. A split-powered DC/RF design consisting of a rack mounted DC power supply and a 24 kW RF remote toroidal applicator head provides highly efficient destruction of NF3 molecules for chamber clean applications or high flow mixed gas species applications.
Technical Specs
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TypeRPS-CH24P1 Remote Plasma Source
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Power Output24 kW
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RF Frequency400 kHz
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Accuracy±1% to power set point
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Gas Supply During IgnitionAr
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NF3 Process Gas1- 50 slm, 20-50 T
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NF3 Operation Reactant Output1-25 slm 20T
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Compatible SpeciesNF3, O2, N2, Ar
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Mixed Species Space30-90 slm
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THD<15%
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Inlet Gas ConnectionKF40
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Outlet Gas ConnectionKF50
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Cooling Water RequiredRemote Head: 3 gpm (11.36 Lpm)
DC Power Supply: 2 gpm (7.57 Lpm) -
Control InterfaceAnalog: DB25
Digital: EtherCAT -
Power Requirements208 V, 3 phase 50/60 Hz, 75 Amps RMS max phase
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DimensionsRemote Head: 22.02 x 10.76 x 11.1 in. (55.93 x 27.33 x 28.19 cm)
Power Supply: 21.24 x 19.00 x 7.0 in. (53.95 x 48.26 x 17.78 cm) -
WeightRemote Head: 100 lbs. (45.36 kg)
Power Supply: 62 lbs. (28.12 kg) -
ComplianceSEMI F47
Resources & Downloads
Drawings & CADs
- RPS-CH24P1 Remote Plasma Source Dimensional Drawings (387 kB, PDF)
Remote Plasma Source, 24 kW, High Flow Applications
Ultra-High Velocity