Process Sense™ NDIR End Point Detector for Chamber Clean
Overview
The Process Sense™ endpoint detector is a small, low-cost SiF4 sensor specifically designed for Remote Plasma Chamber Clean Endpoint detection for silicon-based CVD deposition chambers. Process Sense is based on infrared absorption, the only technique applicable to all plasma cleaning processes (in-situ and remote).
The Process Sense detector gets mounted onto a bypass on the rough line, ensuring no effect on deposition hardware. The signal level reported by the Process Sense detector, which is proportional to SiF4 concentration, can be used to determine the completion of the chamber clean process.
- Sensitivity to SiF4 down to 1 ppm
- Simple analog output for reported concentration signal
Products
| Compare | Description | Drawings, CAD & Specs | Availability | Price | |||
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PROCESS-SENSE-NDIR Clean NDIR Endpoint Sensor, Process Sense™, Non-dispersive Infrared Chamber |
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Specifications
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TypeProcess Sense™ NDIR
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Measurement TechniqueNDIR
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Measurement RangeSiF4: 1-200 ppm (at 760 Torr)
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Detection Limit1 ppm SiF4 (at 760 Torr)
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Response Time1 second report rate
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Calibration Accuracy±10%
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Electrical ConnectorDB25 (DB15 adapter available)
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Power Requirements24 VDC (2 amp)
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Dimensions38 x 12 x 13 cm (15 x 4.5 x 5 inches)
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Weight2.5 kg (5.5 lbs)
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Analog OutputAnalog 1 (AO1): 0-10 V (1x SiF4 concentration)
Analog 2 (AO2): 0-10 V (20x SiF4 concentration) -
Digital OutputFault signals
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Sample Pressure1-760 Torr
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Sample Temperature25-60°C
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FittingsNW25, NW40, NW50 (others available upon request)
Features
Applications
- Silicon Oxides (USG, FSG, PSG, BSG, BPSG)
- Silicon Nitrides
- Polysilicon
- Silane or TEOS processes
Key Benefits
- Reduced chamber clean times with accurate measurement of SiF4 concentration
- Accurate determination of chamber clean endpoint reduces chamber wall over etching
- Increase CVD wafer throughput by shortening chamber clean cycle
Resources
Literature
- Process Sense™ NDIR End Point Detector for Chamber Clean (222.9 kB, PDF)
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