Unlocking Precision and Yield with MKS Microwave Plasma Etching

Overview

In advanced semiconductor manufacturing, where feature sizes are shrinking and material stacks are becoming increasingly complex, traditional etching methods often introduce damage, compromise device integrity, and limit yield. Microwave Plasma Etching is engineered to overcome these challenges.

This technology delivers the gentle, high-selectivity chemistry required to protect sensitive structures while accelerating your process flow.

Microwave Etching Advantages

Key Technical Feature Engineering Impact Yield & Performance Results
High Selectivity & Gentle Chemistry Employs a remote plasma source dominated by neutral radicals, minimizing aggressive ion bombardment. Protects sensitive device structures (e.g., bond wires, metal pads) from physical damage, enabling higher overall yield in advanced packaging and assembly.
Non-Destructive & Artifact-Free Removes materials cleanly without introducing physical or chemical artifacts (e.g., residue, electrical shorts). Preserves device integrity, enabling reliable failure analysis and accurate post-etch electrical testing.
Low Thermal Impact Operates at significantly lower temperatures than conventional thermal processing. Safely processes temperature-sensitive materials and delicate thin-film stacks, expanding your application range in advanced packaging.
Faster Throughput High-density plasma accelerates reaction kinetics. Reduces overall process cycle time for etching and cleaning steps, leading to higher productivity and a lower cost per unit.
Process Stability & Easy Integration Robust, well-characterized equipment and simple gas chemistry. Ensures consistent, repeatable results with minimal disruption, accelerating technology adoption.

The Microwave Advantage in Plasma Etching

Unlocking Precision and Yield with Microwave Plasma Etching

At MKS, we provide the foundational sub-systems that allow engineers to push the boundaries of what is possible in next-generation chip fabrication.

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