The DI-Solver™ NH3 is a compact, stand-alone system designed to provide dissolved ammonia water for use in rinsing processes in the semiconductor industry. With Semiconductor 3D IC architectures using new materials like Cu-Co and Si-SiGe, the ability to wet clean with precise alkaline chemistries is growing in frequency and importance. The system is specifically designed to provide optimal cleaning capability at a given conductivity. The alkaline chemistry of dissolved ammonia provides ESD protection during rinsing, particle lift-off, and residual particle removal. It also prevents corrosion of metal interfaces, which is a common problem in semiconductor manufacturing. The system uses closed-loop control to keep conductivity and pressure stable under changing flow conditions. It also monitors and adjusts the NH4OH concentration to deliver the desired level of dissolved ammonia.
MKS' Di-Solver NH3 leverages the established and proven architecture of LIQUOZON® VariO3 Ozonated Water Delivery System, integrating high purity standard materials and safety features in a rugged system to meet the demands of advanced technology manufacturing.
Reliability & Maintenance
MKS’ DI-Solver NH3 leverages the established and proven architecture of LIQUOZON® Ozonated Water Delivery System, integrating high purity standard materials and safety features in a rugged system to meet the demands of advanced technology manufacturing.
The below figures show the possible performance ranges of different configurations that provide a conductivity range of 5 to 40 μS/cm at 0.5 to 40 lpm (Figure 1), or 5-121 μS/cm at 0.5 to 32 lpm (Figure 2).
Specified achievable dissolved ozone concentration in UPW for a system pressure of 2.5 barg, a cooling water temperature and UPW temperature of 20°C.
N2: ≥ Grade 4 (purity ≥ 99.99%), dew point <-40°C
Ammonia (NH3): ≥ Grade 4.5 (purity ≥ 99.995%)
Ultra-Pure Water (UPW): <0.1 ppb metals, <10 particles/ml of 0.1µm size, free of organics
Clean Dry Air (CDA): Filtration, free of oils and particles
Power: 200-208 V ±10%